例句與用法

1. We also studied some characteristics of sidagating effect using mesfet fabricated in planar boron implanted process including photosensitive , hysteresis , influence of sidegating effect on mesfet threshold voltage , influence of drain - source voltage on sidegating threshold voltage , influence of exchanging drain and source electrode on sidegating threshold voltage , relation between sidegating threshold voltage and the distance between side - gate and mesfet , relation between sidegating effect and floating gate , and so on
   本文還采用平面選擇離子注入隔離工藝，開展了旁柵效應(yīng)的光敏特性、遲滯現(xiàn)象、旁柵效應(yīng)對(duì)mesfet閾值電壓的影響、 mesfet漏源電壓對(duì)旁柵閾值電壓的影響、漏源交換對(duì)旁柵閾值電壓的影響、旁柵閾值電壓與旁柵距的關(guān)系、旁柵效應(yīng)與浮柵的關(guān)系等研究。
2. This paper describes a reconstructive algorithm which is based on network theory for electrical capacitance tomography technic . there are twelve electrodes in the system . the permittivity distribution of flow with two components within a pipeline is reconstructed . assume the permittivity distribution of the region to be reconstructed . then whole measured area is discretized into a network composed of capacitance . the measurement circuit which contains a pair of source electrode and detecting electrode is taken as a four - terminal network . the across admittance of the four - teminal network is proportional to the capacitance between the source electrode and the detecting electrode . modify the distribution of the permittivity according to the difference between the calculated capacitance and measured capacitance . the experimental results show that this algorithm is effective and can coverge
   本文描述了一種用于兩種成份的流體成像的12電極電容層析成像新方法.該方法基于電路的網(wǎng)絡(luò)理論，首先對(duì)重建區(qū)域假定一個(gè)介電率分布，用電容網(wǎng)絡(luò)作為離散化模型，將每一個(gè)源電極和探測(cè)電極對(duì)組成的測(cè)量電路看作一個(gè)四端網(wǎng)絡(luò)，該四端網(wǎng)絡(luò)的跨導(dǎo)與源電極和探測(cè)電極之間的電容值是線性關(guān)系，這個(gè)電容值和測(cè)量得到的電容值之間存在誤差，根據(jù)這個(gè)誤差對(duì)修正介電率分布.通過對(duì)不同介質(zhì)分布作的模擬實(shí)驗(yàn)結(jié)果，證實(shí)了該算法是有效的，收斂的